IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Please note that some Vishay documentation may still make reference to the IEC definition. Thermal pad contour optional with dimensions D1 and E1. Case Temperature tr td off tf Fig. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
Repetitive rating; pulse width limited by maximum junction temperature see fig. Contour of slot optional.
IRFP440 Datasheet PDF
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Drain Current Current regulator Same type as D. Lead finish uncontrolled in L1.
IRFP440 MOSFET. Datasheet pdf. Equivalent
It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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IRFP (IRF) – Power Mosfet(vdss=v, Rds(on)=ohm, Id=a)
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