This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical. BSIM and IC simulation. Circuit simulation and compact models. BSIM – the beginning. BSIM3 – a compact model based on new MOSFET physics. : BSIM4 and MOSFET Modeling for IC Simulation (International Series on Advanced in Solid State Electronics and Technology).
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Available to subscribing institutions. Find it at other libraries via WorldCat Limited preview. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits.
World Scientific Publishing Co. Gate and channel geometries and materials.
BSIM4 and MOSFET modeling for IC simulation [electronic resource] in SearchWorks catalog
Review of the charge-deficit transient NQS model. Imprint Singapore ; Hackensack, N. Saturation junction leakage current and zero-bias capacitance models.
Composite stamps for transient NQS model. Time discretization, equation linearization and matrix stamping. BSIM4 – aimed for nm down to 20nm nodes. Publication date Series International series on advances in solid state electronics and technology Reproduction Electronic reproduction.
BSIM4 and MOSFET Modeling For IC Simulation
Nielsen Book Data Physical description xix, p. Circuit simulation and compact models. Junction diode IV and CV models. Charge and capacitance models.
SearchWorks Catalog Stanford Libraries. Channel DC current and output resistance.
Channel current in subthreshold and moxfet operations. BSIM – the beginning. The intent of this book ch. Velocity saturation and velocity overshoot. Gate intrinsic-input resistance for non-quasi-static modeling. Source and drain contact scenarios and diffusion resistances. Diode temperature-dependence model .
Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design. BSIM4 junction leakage due to trap-assisted tunneling . Fringing and overlap capacitances.
BSIM4 and MOSFET modeling for IC simulation – CERN Document Server
Introduction and chapter objectives. Gate direct-tunneling current theory and model. ISBN electronic bk. Non-quasi-static and parasitic gate and body resistances. Connections of a multi-transistor stack. Gate direct-tunneling and body currents. Physical mechanisms of diode DC currents.
Responsibility Weidong Omdeling, Chenming Hu. Bibliography Includes bibliographical references and index. Series International series on advances in solid state electronics and technology. Skip to search Skip to main moveling. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.
Intrinsic charge and capacitance models. Source and drain parasitics: BSIM4 channel thermal noise models.
Noise representations and parameters. BSIM4 simylation noise models. Output resistance in saturation region. BSIM4 diode charge and capacitance . Source and drain of a transistor with multiple gate fingers.
Describe the connection issue. Source and drain area and perimeter calculation. Single continuous channel charge model. World Scientific Full view.